KP4250-POWER THYRISTOR
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
************************************************************************************************************************************
5800-6600V
DRM
FREE FLOATING TYPE THYRISTOR FOR PHASE CONTROL APPLICATIONS
KT135dT
Features:
. Free-floating silicon technology
. Low on-state and switching losses
. Optimum power handling capability
. Blocking capability up to 6600 volts
. Distributed amplifying gate
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
V
(1)
V
(1)
V
(1)
Device Type
KP4250/58
KP4250/60
KP4250/62
KP4250/65
RRM
DRM
RSM
Notes:
5800
6000
6200
6600
5800
6000
6200
6600
5800
6000
6200
6600
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +110 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 110 oC.
(4) Minimum value for linear and exponential
waveshape to 67% rated VDRM. Gate open.
Tj = 110 oC.
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
(5).The value of di/dt is established in
accordance with JB/T 8950.2-2013
Repetitive peak reverse
IRRM/IDRM
10mA
500 mA (3)
leakage and off state leakage
Critical rate of voltage rise
dV/dt (4)
2000 V/sec (min)
Conducting - On State
Parameter
Symbol
Min.
Max.
Typ.
Units Conditions
Average value of on-state current
RMS value of on-state current
IT(AV)
ITRMS
ITSM
I2t
4250
6680
71400
2.5x107
1000
200
A
A
Sinewave,180o conduction,Tc=70oC
Nominal value
Peak one cycle surge
(non repetitive) current
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 110 oC
A
I square t
A2s
mA
mA
V
10 msec
Latching current
IL
VD = 12 V; RL= 12 ohms
VD = 12 V; I = 2.5 A
ITM=3000A;Tj =25oC
Tj=110oC
Holding current
IH
Peak on-state voltage
Threshold voltage, low-level
Slope resistance, low-level
VTM
VTO
rT
1.7
1.13
V
0.185
mΩ
3000A to 6000A
Critical rate of rise of on-state
current
di/dt
250
A/μs
Repetition
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