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KP4250-66 PDF预览

KP4250-66

更新时间: 2024-11-25 15:19:03
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扬杰 - YANGJIE /
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3页 236K
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T18D

KP4250-66 数据手册

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KP4250-POWER THYRISTOR  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
************************************************************************************************************************************  
5800-6600V  
DRM  
FREE FLOATING TYPE THYRISTOR FOR PHASE CONTROL APPLICATIONS  
KT135dT  
Features:  
. Free-floating silicon technology  
. Low on-state and switching losses  
. Optimum power handling capability  
. Blocking capability up to 6600 volts  
. Distributed amplifying gate  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking - Off State  
V
(1)  
V
(1)  
V
(1)  
Device Type  
KP4250/58  
KP4250/60  
KP4250/62  
KP4250/65  
RRM  
DRM  
RSM  
Notes:  
5800  
6000  
6200  
6600  
5800  
6000  
6200  
6600  
5800  
6000  
6200  
6600  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range 0 to +110 oC.  
(2) 10 msec. max. pulse width  
(3) Maximum value for Tj = 110 oC.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open.  
Tj = 110 oC.  
VRRM = Repetitive peak reverse voltage  
VDRM = Repetitive peak off state voltage  
VRSM = Non repetitive peak reverse voltage (2)  
(5).The value of di/dt is established in  
accordance with JB/T 8950.2-2013  
Repetitive peak reverse  
IRRM/IDRM  
10mA  
500 mA (3)  
leakage and off state leakage  
Critical rate of voltage rise  
dV/dt (4)  
2000 V/sec (min)  
Conducting - On State  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
IT(AV)  
ITRMS  
ITSM  
I2t  
4250  
6680  
71400  
2.5x107  
1000  
200  
A
A
Sinewave,180o conduction,Tc=70oC  
Nominal value  
Peak one cycle surge  
(non repetitive) current  
10.0 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 110 oC  
A
I square t  
A2s  
mA  
mA  
V
10 msec  
Latching current  
IL  
VD = 12 V; RL= 12 ohms  
VD = 12 V; I = 2.5 A  
ITM=3000A;Tj =25oC  
Tj=110oC  
Holding current  
IH  
Peak on-state voltage  
Threshold voltage, low-level  
Slope resistance, low-level  
VTM  
VTO  
rT  
1.7  
1.13  
V
0.185  
mΩ  
3000A to 6000A  
Critical rate of rise of on-state  
current  
di/dt  
250  
A/μs  
Repetition  
http://www.chinarunau.com  
Page 1 of 3  

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