Datasheet > KP270-80

KP270-80

更新时间： 2024-11-16 15:19:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	235K
描述
T5D

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KP270-80 数据手册

KP270-POWER THYRISTOR

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

************************************************************************************************************************************

7400-8500V

DRM

FREE FLOATING TYPE THYRISTOR FOR PHASE CONTROL APPLICATIONS

Features:

KT40dT

. Free-floating silicon technology

. Low on-state and switching losses

. Optimum power handling capability

. Blocking capability up to 8500 volts

. Distributed amplifying gate

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

(1)

Device Type

KP270/74

KP270/80

KP270/85

RRM

DRM

RSM

Notes:

7400

8000

8500

7400

8000

8500

7400

8000

8500

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +115 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 115 ^oC.

(4) Minimum value for linear and exponential

waveshape to 67% rated V_DRM. Gate open.

Tj = 115 ^oC.

V_RRM= Repetitive peak reverse voltage

V_DRM= Repetitive peak off state voltage

V_RSM= Non repetitive peak reverse voltage (2)

(5).The value of di/dt is established in

accordance with JB/T 8950.2-2013

Repetitive peak reverse

I_RRM/I_DRM

10mA

100 mA (3)

leakage and off state leakage

Critical rate of voltage rise

d_V/d_t(4)

2000 V/sec (min)

Conducting - On State

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Average value of on-state current

RMS value of on-state current

I_T(AV)

I_TRMS

I_TSM

I²t

270

425

Sinewave,180^oconduction,T_c=70^oC

Nominal value

Peak one cycle surge

(non repetitive) current

10.0 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, T_j= 115 ^oC

2900

4.2x10⁴

1000

200

I square t

A²s

10 msec

Latching current

I_L

V_D= 12 V; R_L= 12 ohms

V_{D =}12 V; I = 2.5 A

I_TM=500A;Tj =25^oC

Tj=115^oC

Holding current

I_H

Peak on-state voltage

Threshold voltage, low-level

Slope resistance, low-level

V_TM

V_TO

r_T

2.80

1.25

3.10

mΩ

300A to1000A

Critical rate of rise of on-state

current

di/dt

100

A/μs

Repetition

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