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KP1800-14 PDF预览

KP1800-14

更新时间: 2024-11-22 15:18:27
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扬杰 - YANGJIE /
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3页 238K
描述
T10C

KP1800-14 数据手册

 浏览型号KP1800-14的Datasheet PDF文件第2页浏览型号KP1800-14的Datasheet PDF文件第3页 
KP1800-POWER THYRISTOR  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
************************************************************************************************************************************  
1200-1800V  
DRM  
HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS  
Features:  
KT65cT  
. All Diffused Structure  
. Amplifying Gate Configuration  
. Blocking capability up to 1800 volts  
. High dV/dt Capability  
. Pressure Assembled Device  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking - Off State  
V
(1)  
V
(1)  
V
(1)  
Device Type  
KP1800/12  
KP1800/14  
KP1800/16  
KP1800/18  
RRM  
DRM  
RSM  
Notes:  
1200  
1400  
1600  
1800  
1200  
1400  
1600  
1800  
1400  
1600  
1800  
2000  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range 0 to +125 oC.  
(2) 10 msec. max. pulse width  
(3) Maximum value for Tj = 125 oC.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open.  
Tj = 125 oC.  
VRRM = Repetitive peak reverse voltage  
VDRM = Repetitive peak off state voltage  
VRSM = Non repetitive peak reverse voltage (2)  
(5).The value of di/dt is established in  
accordance with standard JB/T  
8950.2-2013  
Repetitive peak reverse  
IRRM/IDRM  
5 mA  
leakage and off state leakage  
120 mA (3)  
Critical rate of voltage rise  
dV/dt (4)  
1000 V/sec  
Conducting - On State  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
IT(AV)  
ITRMS  
ITSM  
I2t  
1800  
2826  
21600  
2.3x106  
1000  
200  
A
A
Sinewave,180o conduction,Tc=70oC  
Nominal value  
Peak one cycle surge  
(non repetitive) current  
10.0 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 125 oC  
A
I square t  
A2s  
10 msec  
Latching current  
IL  
mA  
mA  
V
VD = 12 V; RL= 12 ohms  
VD = 12 V; I = 2.5 A  
ITM=3000A;Tj =25oC  
Tj=125oC  
Holding current  
IH  
Peak on-state voltage  
Threshold voltage, low-level  
Slope resistance, low-level  
VTM  
VTO  
rT  
1.5  
0.88  
V
0.16  
mΩ  
1500A to 3000A  
Critical rate of rise of on-state  
current  
di/dt  
200  
A/μs  
Repetition  
http://www.chinarunau.com  
Page 1 of 3  

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