Datasheet > KP1500-18

KP1500-18

更新时间： 2024-11-06 15:18:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	236K
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T9C

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KP1500-18 数据手册

KP1500-POWER THYRISTOR

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

************************************************************************************************************************************

1200-1800V

DRM

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

Features:

KT60cT

. All Diffused Structure

. Amplifying Gate Configuration

. Blocking capability up to 1800 volts

. High d_V/d_tCapability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

(1)

Device Type

KP1500/12

KP1500/14

KP1500/16

KP1500/18

RRM

DRM

RSM

Notes:

1200

1400

1600

1800

1200

1400

1600

1800

1400

1600

1800

2000

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential

waveshape to 67% rated V_DRM. Gate open.

Tj = 125 ^oC.

V_RRM= Repetitive peak reverse voltage

V_DRM= Repetitive peak off state voltage

V_RSM= Non repetitive peak reverse voltage (2)

(5).The value of di/dt is established in

accordance with standard JB/T

8950.2-2013

Repetitive peak reverse

I_RRM/I_DRM

5 mA

leakage and off state leakage

90 mA (3)

Critical rate of voltage rise

d_V/d_t(4)

1000 V/sec

Conducting - On State

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Average value of on-state current

RMS value of on-state current

I_T(AV)

I_TRMS

I_TSM

I²t

1500

2355

18000

1.6x10⁶

1000

200

Sinewave,180^oconduction,T_c=70^oC

Nominal value

Peak one cycle surge

(non repetitive) current

10.0 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, T_j= 125 ^oC

I square t

A²s

10 msec

Latching current

I_L

V_D= 12 V; R_L= 12 ohms

V_{D =}12 V; I = 2.5 A

I_TM=3000A;Tj =25^oC

Tj=125^oC

Holding current

I_H

Peak on-state voltage

Threshold voltage, low-level

Slope resistance, low-level

V_TM

V_TO

r_T

1.55

0.91

0.3

mΩ

1000A to 3000A

Critical rate of rise of on-state

current

di/dt

200

A/μs

Repetition

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