KP1480-POWER THYRISTOR
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
************************************************************************************************************************************
7400-8500V
DRM
FREE FLOATING TYPE THYRISTOR FOR PHASE CONTROL APPLICATIONS
Features:
KT95dT
. Free-floating silicon technology
. Low on-state and switching losses
. Optimum power handling capability
. Blocking capability up to 8500 volts
. Distributed amplifying gate
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking - Off State
V
(1)
V
(1)
V
(1)
Device Type
KP1480/74
KP1480/80
KP1480/85
RRM
DRM
RSM
Notes:
7400
8000
8500
7400
8000
8500
7400
8000
8500
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +115 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 115 oC.
(4) Minimum value for linear and exponential
waveshape to 67% rated VDRM. Gate open.
Tj = 115 oC.
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non repetitive peak reverse voltage (2)
(5).The value of di/dt is established in
accordance with JB/T 8950.2-2013
Repetitive peak reverse
IRRM/IDRM
10mA
100 mA (3)
leakage and off state leakage
Critical rate of voltage rise
dV/dt (4)
2000 V/sec (min)
Conducting - On State
Parameter
Symbol
Min.
Max.
Typ.
Units Conditions
Average value of on-state current
RMS value of on-state current
IT(AV)
ITRMS
ITSM
I2t
1480
2325
17000
1.4x106
1000
200
A
A
Sinewave,180o conduction,Tc=70oC
Nominal value
Peak one cycle surge
(non repetitive) current
10.0 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 115 oC
A
I square t
A2s
10 msec
Latching current
IL
mA
mA
V
VD = 12 V; RL= 12 ohms
VD = 12 V; I = 2.5 A
ITM=1600A;Tj =25oC
Tj=115oC
Holding current
IH
Peak on-state voltage
Threshold voltage, low-level
Slope resistance, low-level
VTM
VTO
rT
2.10
1.14
V
0.60
mΩ
1000A to 3000A
Critical rate of rise of on-state
current
di/dt
100
A/μs
Repetition
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