Datasheet > KN2907S_02

KN2907S_02

更新时间： 2024-11-30 11:30:55

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
3页	46K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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KN2907S_02 数据手册

SEMICONDUCTOR

KN2907S/AS

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

DIM MILLIMETERS

Low Leakage Current

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

: I_CEX=-50nA(Max.) ; V_CE=-30V, V_EB=-0.5V.

Low Saturation Voltage

: V_CE(sat)=-0.4V(Max.) ; I_C=150mA, I_B=-15mA.

Complementary to the KN2222S/2222AS.

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

RATING

KN2907S KN2907AS

-60

SYMBOL

UNIT

1. EMITTER

2. BASE

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

3. COLLECTOR

-40

-60

-5

SOT-23

-600

150

350

150

P_C

Collector Power Dissipation

(Ta=25

)

P_C*

T_j

Junction Temperature

T_stg

Storage Temperature Range

-55 150

Note : * Package Mounted On 99.5% Alumina 10

0.6

)

Marking

Lot No.

Type Name

ZDA

ZHA

MARK SPEC

TYPE

MARK

KN2907S

KN2907AS

ZDA

ZHA

2002. 6. 25

Revision No : 3

1/3

12 3

中文翻译

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