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KMQE10013M-B318 PDF预览

KMQE10013M-B318

更新时间: 2024-11-11 20:10:51
品牌 Logo 应用领域
三星 - SAMSUNG 数据传输外围集成电路
页数 文件大小 规格书
1页 1482K
描述
Flash Memory Drive, 200MBps, CMOS, PBGA221, BGA-221

KMQE10013M-B318 技术参数

生命周期:Active包装说明:BGA-221
Reach Compliance Code:compliant风险等级:5.78
最大数据传输速率:200 MBpsJESD-30 代码:X-PBGA-B221
端子数量:221封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:UNSPECIFIED
封装形式:GRID ARRAY表面贴装:YES
技术:CMOS端子形式:BALL
端子位置:BOTTOMuPs/uCs/外围集成电路类型:SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE
Base Number Matches:1

KMQE10013M-B318 数据手册

  
6/3/2016  
KMQE10013M­B318 ­ eMMC Based MCP | Samsung Semiconductor Global Website  
+
CHECK OUT NOW THAT HISTORY IS CREATED!  
eMMC Based MCP  
KMQE10013M-B318  
KMQE10013M-B318  
'
OVERVIEW  
eMMC 16GB + LPDDR3 16Gb with 1600Mbps of eMMC Based MCP  
SPECIFICATIONS  
EMMC BASED MCP > KMQE10013M-B318  
Production Status  
Mass Production  
eMMC 16GB(M) + LPDDR3 16Gb  
x8, x32  
Density  
Organizatioin  
Speed(Mbps)  
Package  
1600Mbps  
221FBGA  
Application  
Smartphone  
http://www.samsung.com/semiconductor/products/mcp/emmc­based­mcp/KMQE10013M­B318?ia=860  
1/3  

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