5秒后页面跳转
KMM377S823DT3-GL PDF预览

KMM377S823DT3-GL

更新时间: 2024-11-21 20:10:51
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器内存集成电路
页数 文件大小 规格书
11页 180K
描述
Synchronous DRAM Module, 8MX72, 6ns, CMOS

KMM377S823DT3-GL 技术参数

生命周期:Obsolete包装说明:DIMM, DIMM168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.32风险等级:5.43
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N168
内存密度:603979776 bit内存集成电路类型:SYNCHRONOUS DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:168
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX72
输出特性:3-STATE封装主体材料:UNSPECIFIED
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:3.3 V认证状态:Not Qualified
刷新周期:4096自我刷新:YES
最大待机电流:0.011 A子类别:DRAMs
最大压摆率:1.625 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

KMM377S823DT3-GL 数据手册

 浏览型号KMM377S823DT3-GL的Datasheet PDF文件第2页浏览型号KMM377S823DT3-GL的Datasheet PDF文件第3页浏览型号KMM377S823DT3-GL的Datasheet PDF文件第4页浏览型号KMM377S823DT3-GL的Datasheet PDF文件第5页浏览型号KMM377S823DT3-GL的Datasheet PDF文件第6页浏览型号KMM377S823DT3-GL的Datasheet PDF文件第7页 
PC100 Registered DIMM  
KMM377S823DT3  
Revision History  
Revision 0.0 (June 2, 1999)  
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.  
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.  
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.  
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.  
• Symbol Change Notice  
Before  
After  
I
I
I
Input leakage current (inputs)  
IL  
I
Input leakage current  
LI  
Input leakage current (I/O pins)  
IL  
Output open @ DC characteristic table  
Io  
Output open @ DC characteristic table  
OL  
Test Condition in DC CHARACTERISTIC Change Notice  
Symbol  
Before  
CKE £ VIL(max), tCC = 15ns  
CKE ³ VIH(min), CS ³ VIH(min), tCC = 15ns  
After  
I
I
I
CKE £ VIL(max), tCC = 10ns  
CC2P , CC3P  
I
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns  
CC2N , CC3N  
Input signals are changed one time during 30ns  
Input signals are changed one time during 20ns  
I
2 Banks activated  
4 Banks activated  
CC4  
Revision 0.1 (July 5, 1999)  
• Added Notes @OPERATING AC PARAMETER  
Notes : 5. For -H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .  
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.  
• Redefind feedback capacitor value to Cb, variable value @ Functional Block Diagram.  
Rev. 0.1 July 1999  

与KMM377S823DT3-GL相关器件

型号 品牌 获取价格 描述 数据表
KMM378S1620BT-G0 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 7ns, CMOS
KMM378S1620BT-G8 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S1620BT-GH SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S1620BT-GL SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S1620CT-G0 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 7ns, CMOS
KMM378S1620CT-G8 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S1620CT-GH SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S1620CT-GL SAMSUNG

获取价格

Synchronous DRAM Module, 16MX72, 6ns, CMOS
KMM378S203CT-G0 SAMSUNG

获取价格

Synchronous DRAM Module, 2MX72, 7ns, CMOS
KMM378S203CT-G8 SAMSUNG

获取价格

Synchronous DRAM Module, 2MX72, 6ns, CMOS