生命周期: | Obsolete | 零件包装代码: | DIMM |
包装说明: | DIMM, DIMM168 | 针数: | 168 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.36 | 风险等级: | 5.84 |
Is Samacsys: | N | 访问模式: | FAST PAGE |
最长访问时间: | 50 ns | 其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
备用内存宽度: | 36 | I/O 类型: | COMMON |
JESD-30 代码: | R-XDMA-N168 | 内存密度: | 1207959552 bit |
内存集成电路类型: | FAST PAGE DRAM MODULE | 内存宽度: | 72 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 168 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 16MX72 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | DIMM |
封装等效代码: | DIMM168 | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
座面最大高度: | 31.75 mm | 最大待机电流: | 0.03 A |
子类别: | Other Memory ICs | 最大压摆率: | 2.7 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KMM372C1680AS-6 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 16MX72, 60ns, CMOS, DIMM-168 | |
KMM372C1680BK | SAMSUNG |
获取价格 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V | |
KMM372C1680BK-5 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 16MX72, 50ns, CMOS, GLASS EPOXY, DIMM-168 | |
KMM372C1680BK-6 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 16MX72, 60ns, CMOS, GLASS EPOXY, DIMM-168 | |
KMM372C1680BS | SAMSUNG |
获取价格 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V | |
KMM372C1680BS-6 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 16MX72, 60ns, CMOS, GLASS EPOXY, DIMM-168 | |
KMM372C1680CS-5 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 16MX72, 50ns, CMOS | |
KMM372C213AJ-6 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 2MX72, 60ns, CMOS, DIMM-168 | |
KMM372C213CK | SAMSUNG |
获取价格 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V | |
KMM372C213CK-5 | SAMSUNG |
获取价格 |
Fast Page DRAM Module, 2MX72, 50ns, CMOS, GLASS EPOXY, DIMM-168 |