Datasheet > KMM366S924ATS-GL

KMM366S924ATS-GL

更新时间： 2024-11-26 08:06:55

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	148K
描述
Synchronous DRAM Module, 8MX64, 6ns, CMOS

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KMM366S924ATS-GL 数据手册

KMM366S924ATS

PC100 Unbuffered DIMM

Revision History

Revision 0.0 (June 7, 1999)

• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.

• Skip ICC4 value of CL=2 in DC characteristics in datasheet.

• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.

• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.

• Symbol Change Notice

Before

After

I_IL

Input leakage current (inputs)

I_LI

Input leakage current

I_IL

Input leakage current (I/O pins)

I_OL

Output open @ DC characteristic table

• Test Condition in DC CHARACTERISTIC Change Notice

Symbol

I_{CC2P ,}I_CC3P

I_{CC2N ,}I_CC3N

Before

CKE £ VIL(max), tCC = 15ns

CKE ³ VIH(min), CS ³ VIH(min), tCC = 15ns

After

CKE £ VIL(max), tCC = 10ns

CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns

Input signals are changed one time during 30ns

Input signals are changed one time during 20ns

I_CC4

2 Banks activated

4 Banks activated

Rev. 0.0 Jun. 1999

12 3 4 5 6 7...10

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与KMM366S924ATS-GL相关器件

型号	品牌	获取价格	描述	数据表
KMM368L1713BT-F0	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184
KMM368L1713BT-FY	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L1713BT-FZ	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L1713BT-GZ	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L1714BT-F0	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184
KMM368L1714BT-FY	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L1714BT-G0	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.8ns, CMOS, DIMM-184
KMM368L1714BT-GY	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L1714BT-GZ	SAMSUNG	获取价格	DDR DRAM Module, 16MX64, 0.75ns, CMOS, DIMM-184
KMM368L914BT-FY	SAMSUNG	获取价格	DDR DRAM Module, 8MX64, 0.75ns, CMOS, DIMM-184