Datasheet > KML0D4P20E

KML0D4P20E

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	104K
描述
ESM

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中文翻译

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数据手册

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KML0D4P20E 数据手册

SEMICONDUCTOR

KML0D4P20E

P-Ch Trench MOSFET

TECHNICAL DATA

General Description

It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered

Systems and Level-Shifter.

DIM MILLIMETERS

1.60+0.20

FEATURES

0.85 0.10

· V_DSS= -20V, I_D= -0.35A

· Drain-Soure ON Resistance

: R_DS(ON)=1.2Ω @ V_GS= -4.5V

: R_DS(ON)=1.6Ω @ V_GS= -2.5V

: R_DS(ON)=2.7Ω @ V_GS= -1.8V

· ESD Protection diode.

0.70 0.10

0.27+0.10

1.60+0.10

0.39 0.10

1.00 0.10

0.50

0.13+0.05

1. Source

2. Gate

3. Drain

ESM

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

P-Ch

-20

UNIT

V_GSS

Gate-Source Voltage

±6

Marking

DC @T_A=25℃

DC @T_A=85℃

Pulsed

(Note 1)

(Note 2)

-350

-255

-1400

210

I_D

Drain Current

I_DP

P_D

Drain Power Dissipation

℃

Type Name

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

R_thJA

-55∼ 150

600

℃

Thermal Resistance, Junction to Ambient (Note 2)

℃/W

Note 1) Drain current limited by maximum junction temperature

Note 2) Surface Mounted on 1˝ ×1˝ FR4 Board

PIN CONNECTION (TOP VIEW)

2020. 03. 18

Revision No : 3

1/4

12 3 4

中文翻译

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