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KMBT5551(MMBT5551) PDF预览

KMBT5551(MMBT5551)

更新时间: 2024-10-15 18:09:39
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科信 - KEXIN /
页数 文件大小 规格书
2页 72K
描述
NPN Transistor

KMBT5551(MMBT5551) 数据手册

 浏览型号KMBT5551(MMBT5551)的Datasheet PDF文件第2页 
SMD Type  
Transistors  
NPN Transistors  
KMBT5551(MMBT5551)  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
High Voltage Transistors  
Pb-Free Packages are Available  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
180  
Collector-emitter voltage  
160  
V
Emitter-base voltage  
6
0.6  
V
Collector current-continuous  
Collector Power Dissipation  
Junction and storage temperature  
A
Pc  
300  
mW  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cutoff current  
VCBO  
VCEO  
VEBO  
ICBO  
IC = 100 ìA, IE = 0  
180  
160  
6
IC = 1.0 mA, IB = 0  
IE = 10 ìA, IC = 0  
V
V
VCB = 120 V, IE = 0  
VEB = 4.0 V, IC = 0  
IC = 1.0 mA, VCE = 5 V  
IC = 10 mA, VCE = 5 V  
IC = 50 mA, VCE = 5 V  
50  
50  
nA  
nA  
Emitter cutoff current  
IEBO  
80  
100  
50  
DC current gain *  
hFE  
300  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat) IC = 50 mA, IB = 5.0 mA  
VBE(sat) IC = 50 mA, IB = 5.0 mA  
0.5  
1.0  
V
V
Transiston frequency  
fT  
VCE=10V,IC=10mA,f=100MHz  
100  
MHz  
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.  
Marking  
Marking  
G1  
1
www.kexin.com.cn  

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