Datasheet > KMBT5401

KMBT5401

更新时间： 2024-01-16 12:28:13

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	133K
描述
Pb-Free Packages are Available

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中文翻译

获取价格

数据手册

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KMBT5401 数据手册

SSMMDD TTyyppee

TTrraannssiissttoorrs

Product specification

KMBT5401^(MMBT5401)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High Voltage Transistors

Pb-Free Packages are Available

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-160

Unit

Collector-emitter voltage

-150

Emitter-base voltage

-5

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

-0.6

300

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

-160

-150

-5

IC = -100 A, IE = 0

IC =- 1.0 mA, IB = 0

IE = -10 A, IC = 0

VCB =- 120 V, IE = 0

VEB = -4.0 V, IC = 0

IC = -1.0 mA, VCE = -5 V

IC = -10 mA, VCE = -5 V

IC = -50 mA, VCE = -5 V

-0.1

Emitter cutoff current

IEBO

100

DC current gain *

hFE

300

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat) IC = -50 mA, IB = -5.0 mA

VBE(sat) IC = -50 mA, IB = -5.0 mA

-0.5

-1.0

Transiston frequency

VCE=-5V,IC=-10mA,f=30MHz

100

MHz

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

中文翻译

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