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KMBT3906 PDF预览

KMBT3906

更新时间: 2024-11-01 12:34:03
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TYSEMI /
页数 文件大小 规格书
2页 149K
描述
Epitaxial planar die construction

KMBT3906 数据手册

 浏览型号KMBT3906的Datasheet PDF文件第2页 
Product specification  
KMBT3906(MMBT3906)  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Epitaxial planar die construction  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector- Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-40  
Unit  
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
-40  
V
-5  
V
Collector Current- Continuous  
Collector Dissipation  
-0.2  
A
PC  
0.3  
W
Junction and Storage Temperature  
TJ, Tstg  
-55 to 150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IcBO  
Testconditons  
Min  
Typ  
Max  
Unit  
Collector - base breakdown voltage  
Collector - emitter breakdown voltage  
Emitter- base breakdown voltage  
Collector cut-off current  
-40  
-40  
-5  
V
V
V
Ic= -100 ìA IE=0  
Ic= -1 mA IB=0  
IE= -100 ìA IC=0  
VCB= -40 V , IE=0  
-0.1  
-50  
A
Collector cut-off current  
IcEO  
VCE= -40 V , VBE(off)=-3V  
VEB= -5V , IC=0  
nA  
A
Emitter cut-off current  
IEBO  
-0.1  
300  
VCE= -1V, IC= -10mA  
VCE= -1V, IC= -50mA  
100  
60  
DC current gain  
hFE  
Collector- emitter saturation voltage  
Base - emitter saturation voltage  
Delay time  
VCE(sat) IC=-50 mA, IB= -5mA  
VBE(sat) IC=-50 mA, IB= -5mA  
-0.3  
-0.95  
35  
V
V
td  
tr  
VCC=-3.0V,VBE=0.5V  
IC=-10mA,IB1=-1.0mA  
VCC=-3.0V,IC=-10mA  
IB1=IB2=-1.0mA  
ns  
Rise time  
35  
Storage time  
ts  
tf  
225  
75  
ns  
Fall time  
Transition frequency  
fT  
VCE= -20V, IC= -10mA, f=100MHz  
250  
MHz  
Marking  
Marking  
2A  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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