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KM68V1002BJ-10 PDF预览

KM68V1002BJ-10

更新时间: 2024-11-11 20:10:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 184K
描述
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

KM68V1002BJ-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ32,.44
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.31最长访问时间:10 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J32
JESD-609代码:e0长度:20.96 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装等效代码:SOJ32,.44封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:3.76 mm
最大待机电流:0.005 A最小待机电流:3 V
子类别:SRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

KM68V1002BJ-10 数据手册

 浏览型号KM68V1002BJ-10的Datasheet PDF文件第2页浏览型号KM68V1002BJ-10的Datasheet PDF文件第3页浏览型号KM68V1002BJ-10的Datasheet PDF文件第4页浏览型号KM68V1002BJ-10的Datasheet PDF文件第5页浏览型号KM68V1002BJ-10的Datasheet PDF文件第6页浏览型号KM68V1002BJ-10的Datasheet PDF文件第7页 
Preliminary  
PRELIMINARY  
CMOS SRAM  
KM68V1002B/BL, KM68V1002BI/BLI  
Document Title  
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev.1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev.2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Delete 32-SOJ-300 package.  
2.3. Add Capacitive load of the test environment in A.C test load.  
2.4. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
160/150/140mA  
30mA  
Changed spec.  
Items  
(8/10/12ns part)  
160/155/150mA  
50mA  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
ISB1  
Previous spec.  
Changed spec.  
0.7mA  
0.5mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  

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KM68V1002BJ-1200 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BJI-10 SAMSUNG

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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BJI-100 SAMSUNG

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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BJI-120 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BJI-800 SAMSUNG

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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BLJ-12 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BLJ-120 SAMSUNG

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BLJI-80 SAMSUNG

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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
KM68V1002BLSJ-8 SAMSUNG

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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32
KM68V1002BLT-100 SAMSUNG

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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32