是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SOJ, SOJ32,.44 |
Reach Compliance Code: | unknown | 风险等级: | 5.92 |
最长访问时间: | 12 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J32 | JESD-609代码: | e0 |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOJ |
封装等效代码: | SOJ32,.44 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.01 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.14 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM681002BJI-8 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc | |
KM681002BLSJ-10 | SAMSUNG |
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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32 | |
KM681002BLSJ-8 | SAMSUNG |
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Standard SRAM, 128KX8, 8ns, CMOS, PDSO32 | |
KM681002BSJ-12 | SAMSUNG |
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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32 | |
KM681002BSJI-12 | SAMSUNG |
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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32 | |
KM681002BT-10 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc | |
KM681002BT-12 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc | |
KM681002BT-8 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc | |
KM681002BTI-10 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc | |
KM681002BTI-12 | SAMSUNG |
获取价格 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commerc |