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KM616V1002BTI-80 PDF预览

KM616V1002BTI-80

更新时间: 2024-09-24 14:51:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 205K
描述
Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM616V1002BTI-80 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:8 ns
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

KM616V1002BTI-80 数据手册

 浏览型号KM616V1002BTI-80的Datasheet PDF文件第2页浏览型号KM616V1002BTI-80的Datasheet PDF文件第3页浏览型号KM616V1002BTI-80的Datasheet PDF文件第4页浏览型号KM616V1002BTI-80的Datasheet PDF文件第5页浏览型号KM616V1002BTI-80的Datasheet PDF文件第6页浏览型号KM616V1002BTI-80的Datasheet PDF文件第7页 
PRELIMINARY  
Preliminary  
PRELIMINARY  
CMOS SRAM  
KM616V1002B/BL, KM616V1002BI/BLI  
Document Title  
64Kx16 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev. 2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Add Capacitive load of the test environment in A.C test load.  
2.3. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
200/190/180mA  
30mA  
Changed spec.  
(8/10/12ns part)  
200/195/190mA  
50mA  
Items  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
Previous spec.  
Changed spec.  
ISB  
0.5mA  
0.7mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  

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Standard SRAM, 64KX16, 12ns, CMOS, PBGA48, 0.75 MM PITCH, FBGA-48
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