5秒后页面跳转
KM616V1002BJI-80 PDF预览

KM616V1002BJI-80

更新时间: 2023-02-26 14:15:43
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 205K
描述
Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

KM616V1002BJI-80 数据手册

 浏览型号KM616V1002BJI-80的Datasheet PDF文件第2页浏览型号KM616V1002BJI-80的Datasheet PDF文件第3页浏览型号KM616V1002BJI-80的Datasheet PDF文件第4页浏览型号KM616V1002BJI-80的Datasheet PDF文件第5页浏览型号KM616V1002BJI-80的Datasheet PDF文件第6页浏览型号KM616V1002BJI-80的Datasheet PDF文件第7页 
PRELIMINARY  
Preliminary  
PRELIMINARY  
CMOS SRAM  
KM616V1002B/BL, KM616V1002BI/BLI  
Document Title  
64Kx16 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Draft Data  
Remark  
Initial release with Design Target.  
Apr. 1st, 1997  
Jun. 1st, 1997  
Design Target  
Preliminary  
Release to Preliminary Data Sheet.  
1.1. Replace Design Target to Preliminary.  
Rev. 2.0  
Release to Final Data Sheet.  
Feb. 25th, 1998  
Final  
2.1. Delete Preliminary.  
2.2. Add Capacitive load of the test environment in A.C test load.  
2.3. Change D.C characteristics.  
Previous spec.  
(8/10/12ns part)  
200/190/180mA  
30mA  
Changed spec.  
(8/10/12ns part)  
200/195/190mA  
50mA  
Items  
ICC  
ISB  
Rev. 2.1  
Aug. 4th, 1998  
Final  
Change Standby and Data Retention Current for L-ver.  
Items  
Previous spec.  
Changed spec.  
ISB  
0.5mA  
0.7mA  
IDR at 3.0V  
IDR at 2.0V  
0.4mA  
0.3mA  
0.5mA  
0.4mA  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.1  
August 1998  
- 1 -  

与KM616V1002BJI-80相关器件

型号 品牌 获取价格 描述 数据表
KM616V1002BLIJ-10 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLJ-10 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLJ-80 SAMSUNG

获取价格

Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLJI-10 SAMSUNG

获取价格

Standard SRAM, 64KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLJI-120 SAMSUNG

获取价格

Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLJI-8 SAMSUNG

获取价格

Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44
KM616V1002BLT-12 SAMSUNG

获取价格

Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616V1002BLT-8 SAMSUNG

获取价格

Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616V1002BT-120 SAMSUNG

获取价格

Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616V1002BT-8 SAMSUNG

获取价格

Standard SRAM, 64KX16, 8ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44