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KM616FS2010A PDF预览

KM616FS2010A

更新时间: 2024-11-08 14:51:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
9页 158K
描述
SRAM

KM616FS2010A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

KM616FS2010A 数据手册

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KM616FS2010A Family  
CMOS SRAM  
Document Title  
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial Draft  
June 25, 1998  
Advance  
1.0  
Finalize  
November 12, 1998 Final  
- IDR test condition change: Vcc=1.5V to Vcc=1.2V  
- Improve ICC2: 35mA ® 30mA  
- Improve IDR: 3mA ® 2mA  
- 48-CSP package dimension change  
Die thickness: 0.32mm ® 0.45mm  
E: 0.80mm ® 0.93mm  
E1: 0.55mm ® 0.68mm  
- Operation voltage range change: 2.4~2.6V ® 2.3~2.7V  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
- 1 -  
November 1998  

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