Datasheet > KM611001

KM611001

更新时间： 2024-11-26 22:32:15

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
8页	99K
描述
1M x 1Bit High-Speed CMOS SRAM

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中文翻译

获取价格

数据手册

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KM611001 数据手册

KM611001/L

CMOS SRAM

1M x 1Bit High-Speed CMOS SRAM

FEATURES

GENERAL DESCRIPTION

• Fast Access Time 20, 25, 35ns(Max.)

• Low Power Dissipation

The KM611001/L is a 1,048,576-bit high-speed Static

Random Access Memory organized as 1,048,576

words by 1 bit. The KM611001/L has separate input

and output lines for fast read and write access. The

device is fabricated using Samsung`s advanced

CMOS process and designed for high-speed circuit

technology. It is particularly well suited for use in high-

density high-speed system applications. The

KM611001/L is packaged in a 400 mil 28-pin plastic DIP

or SOJ.

Standby (TTL) : 40 mA(Max.)

(CMOS): 2 mA(Max.)

0.5 mA(Max.) - L-ver.

OperatingKM611001/L -20 : 130 mA(Max.)

KM611001/L -25 : 110 mA(Max.)

KM611001/L -35 : 100 mA(Max.)

• Single 5.0V ± 10% Power Supply

• TTL Compatible Inputs and Outputs

• Fully Static Operation

- No Clock or Refresh required

• Three State Outputs

• Low Data Retention Voltage : 2V(Min.)- L-Ver Only

• Standard Pin Configuration

KM611001P/LP : 28-DIP-400

KM611001J/LJ : 28-SOJ-400A

PIN CONFIGURATION(TOP VIEW)

FUNCTIONAL BLOCK DIAGRAM

Pre-Charge Circuit

Clk Gen.

N.C

28 Vcc

27 A19

26 A18

25 A17

24 A16

23 A15

22 A14

21 N.C

20 A13

19 A12

18 A11

17 A10

16 DIN

15 /CS

MEMORY ARRAY

512 Rows

2048x1 Columns

SOJ/DIP

A8 10

A9 11

DOUT 12

/WE 13

Vss 14

DIN

I/O Circuit

Column Select

Data

Cont.

DOUT

Clk

Gen.

PIN DESCRIPTION

A4 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19

Pin Name

Pin Function

A0-A19

/WE

/CS

Address Inputs

WriteEnable

/CS

ChipSelect

Data Input

/WE

DIN

DOUT

Vcc

DataOutput

Power (+5V)

Ground

Vss

N.C

NoConnection

Rev 2.0

July-1996

12 3 4 5 6 7 8

中文翻译

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与KM611001相关器件

型号	品牌	获取价格	描述	数据表
KM611001-20	SAMSUNG	获取价格	Standard SRAM, 1MX1, 20ns, CMOS, PDIP28
KM611001-25	SAMSUNG	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDIP28
KM611001-35	SAMSUNG	获取价格	Standard SRAM, 1MX1, 35ns, CMOS, PDIP28
KM611001J-20	SAMSUNG	获取价格	Standard SRAM, 1MX1, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
KM611001J-25	SAMSUNG	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
KM611001J-35	SAMSUNG	获取价格	Standard SRAM, 1MX1, 35ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
KM611001L	SAMSUNG	获取价格	1M x 1Bit High-Speed CMOS SRAM
KM611001LJ-20	SAMSUNG	获取价格	Standard SRAM, 1MX1, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
KM611001LJ-25	SAMSUNG	获取价格	Standard SRAM, 1MX1, 25ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
KM611001LP-20	SAMSUNG	获取价格	Standard SRAM, 1MX1, 20ns, CMOS, PDIP28, 0.400 INCH, PLASTIC, DIP-28