Datasheet > KM44C4104CK-L5

KM44C4104CK-L5

更新时间： 2024-11-29 05:37:11

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
21页	384K
描述
EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

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KM44C4104CK-L5 数据手册

KM44C4004C, KM44C4104C

KM44V4004C, KM44V4104C

CMOS DRAM

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of

memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K

Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this

family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh

operation is available in L-version.

This 4Mx4 EDO DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consump-

tion and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer.

FEATURES

• Part Identification

• Extended Data Out Mode operation

(Fast Page Mode with Extended Data Out)

• CAS-before-RAS refresh capability

- KM44C4004C/C-L (5V, 4K Ref.)

• RAS-only and Hidden refresh capability

- KM44C4104C/C-L (5V, 2K Ref.)

• Self-refresh capability (L-ver only)

- KM44V4004C/C-L (3.3V, 4K Ref.)

- KM44V4104C/C-L (3.3V, 2K Ref.)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• ActivePowerDissipation

Unit : mW

3.3V

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

Speed

-5

-6

324

288

396

360

495

440

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

VCC

Refresh

cycle

Refresh period

RAS

CAS

Vcc

Vss

Control

Clocks

NO.

Normal

L-ver

VBB Generator

C4004C

V4004C

C4104C

V4104C

3.3V

64ms

Data in

128ms

Buffer

Row Decoder

Refresh Timer

Refresh Control

Refresh Counter

32ms

3.3V

DQ0

DQ3

Memory Array

4,194,304 x4

Cells

• Performance Range

A0-A11

(A0 - A10) *1

A0 - A9

(A0 - A10) *1

Row Address Buffer

Col. Address Buffer

Speed

-5

Remark

tRAC

50ns

60ns

tCAC

tRC

tHPC

Data out

Buffer

Column Decoder

15ns

84ns

20ns 5V/3.3V

-6

17ns 104ns 25ns 5V/3.3V

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...21

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与KM44C4104CK-L5相关器件

型号	品牌	获取价格	描述	数据表
KM44C4104CT-5	SAMSUNG	获取价格	DRAM
KM44C4104CT-L5	SAMSUNG	获取价格	DRAM
KM44C4105BS-7	SAMSUNG	获取价格	EDO DRAM, 4MX4, 70ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28
KM44C4105C	SAMSUNG	获取价格	4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
KM44C4105CK-5	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
KM44C4105CK-L6	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
KM44C4105CS-5	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4105CS-6	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4105CS-L6	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4110AJ-5	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, SOJ-28/24

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