Datasheet > KM44C4103CK-6

KM44C4103CK-6

更新时间： 2024-11-27 09:07:47

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	376K
描述
Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

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中文翻译

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数据手册
替代型号

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KM44C4103CK-6 数据手册

KM44C4003C, KM44C4103C

CMOS DRAM

4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 4 bit Quad CAS with Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access

of memory cells within the same row. Refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low

power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only

refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. Four separate CAS pins provide for

seperate I/O operation allowing this device to operate in parity mode.

This 4Mx4 Fast Page Mode Quad CAS DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-

width, low power consumption and high reliability.

FEATURES

• Part Identification

• Fast Page Mode operation

• Four seperate CAS pins provide for separate I/O operation

• CAS-before-RAS refresh capability

- KM44C4003C/C-L (5V, 4K Ref.)

- KM44C4103C/C-L (5V, 2K Ref.)

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast paralleltest mode capability

• TTL compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Active Power Dissipation

Unit : mW

Refresh Cycle

Speed

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply

495

440

-5

-6

605

550

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh period

RAS

CAS0 - 3

Vcc

Vss

Control

Clocks

Normal

L-ver

VBB Generator

C4003C

C4103C

64ms

32ms

128ms

Data in

Buffer

Row Decoder

Refresh Timer

Refresh Control

Refresh Counter

DQ0

DQ3

Memory Array

4,194,304 x 4

Cells

• Performance Range

Speed

-5

Remark

35ns 5V/3.3V

tRAC

50ns

60ns

tCAC

tRC

tPC

A0-A11

(A0 - A10) *1

A0 - A9

Row Address Buffer

Col. Address Buffer

13ns

90ns

Data out

Buffer

Column Decoder

-6

15ns 110ns 40ns 5V/3.3V

(A0 - A10) *1

Note) *1 : 2K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

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KM44C4103CK-6 替代型号

型号	品牌	替代类型	描述	数据表
KM44C4105CK-5	SAMSUNG	功能相似	EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28

与KM44C4103CK-6相关器件

型号	品牌	获取价格	描述	数据表
KM44C4103CK-L5	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
KM44C4103CS-6	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4103CS-L5	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4103CS-L6	SAMSUNG	获取价格	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
KM44C4104AK-5	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
KM44C4104AK-8	SAMSUNG	获取价格	EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
KM44C4104ALK-7	SAMSUNG	获取价格	EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
KM44C4104ALLTR-6	SAMSUNG	获取价格	EDO DRAM, 4MX4, 60ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, REVERSE, TSOP2-24
KM44C4104ALLTR-7	SAMSUNG	获取价格	EDO DRAM, 4MX4, 70ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, REVERSE, TSOP2-24
KM44C4104ASLS-5	SAMSUNG	获取价格	EDO DRAM, 4MX4, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24

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