Datasheet > KM44C1004DJ-L5

KM44C1004DJ-L5

更新时间： 2024-09-25 06:14:51

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
22页	413K
描述
EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20

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中文翻译

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数据手册

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KM44C1004DJ-L5 数据手册

KM44C1004D, KM44V1004D

CMOS DRAM

1M x 4Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 1,048,576 x 41bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory

cells within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power),

and package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh

and Hidden refresh capabilities.

This 1Mx4 Extended Data Out DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low

power consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and

high performance microprocessor systems.

• Extended Data Out operation

FEATURES

•

CAS-before-RAS refresh capability

• Part Identification

RAS-only and Hidden refresh capability

• Self-refresh capability (3.3V, L-ver only)

- KM44C1004D/D-L(5V)

- KM44V1004D/D-L(3.3V)

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early write or output enable controlled write

•

JEDEC Standard pinout

• Active Power Dissipation

Available in 26(20)-pin SOJ 300mil and TSOP(II)

300mil packages

Unit : mW

Speed

-5

3.3V

•

Single +5V±10% power supply(5V product)

468

• Single +3.3V±0.3V power supply(3.3V product)

-6

220

200

413

-7

358

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

RAS

CAS

Vcc

Vss

Control

Clocks

Part

NO.

Refresh

cycle

Refresh Period

VBB Generator

Normal

L-ver

KM44C1004D

KM44V1004D

16ms

128ms

Row Decoder

Refresh Timer

Refresh Control

Data in

Buffer

Memory Array

1,048,576 x4

Cells

DQ0

DQ3

Refresh Counter

Row Address Buffer

Col. Address Buffer

• Performance Range

Spee

-5

Remark

5V only

tRAC

50n

60n

70n

tCAC

tRC

tHPC

A0~A9

Data out

Buffer

15ns

84ns

20ns

Column Decoder

-6

15ns 104ns 25ns 5V/3.3V

20ns 124ns 30ns 5V/3.3V

-7

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...22

中文翻译

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与KM44C1004DJ-L5相关器件

型号	品牌	获取价格	描述	数据表
KM44C1004DJ-L6	SAMSUNG	获取价格	EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20
KM44C1004DJ-L7	SAMSUNG	获取价格	EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20
KM44C1004DT-5	SAMSUNG	获取价格	EDO DRAM, 1MX4, 50ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
KM44C1004DT-7	SAMSUNG	获取价格	EDO DRAM, 1MX4, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
KM44C1004DT-L6	SAMSUNG	获取价格	EDO DRAM, 1MX4, 60ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
KM44C1005DJ-5	SAMSUNG	获取价格	EDO DRAM, 1MX4, 50ns, CMOS, PDSO24, 0.300 INCH, SOJ-26/24
KM44C1005DT-7	SAMSUNG	获取价格	EDO DRAM, 1MX4, 70ns, CMOS, PDSO24, 0.300 INCH, TSOP2-26/24
KM44C1010BV-8	SAMSUNG	获取价格	Fast Page DRAM, 1MX4, 80ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20
KM44C1012AP-7	SAMSUNG	获取价格	Static Column DRAM, 1MX4, 70ns, CMOS, PDIP20, PLASTIC, DIP-20
KM44C1012BP-6	SAMSUNG	获取价格	Static Column DRAM, 1MX4, 60ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20

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