Datasheet > KM23C64000BG-10

KM23C64000BG-10

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		有原始数据的样本ROM 光电二极管
页数	文件大小	规格书
4页	73K
描述
MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44

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KM23C64000BG-10 数据手册

Advance Information

KM23C64000BG

CMOS MASK ROM

64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

FEATURES

GENERAL DESCRIPTION

· Switchable organization

8,388,608 x 8(byte mode)

4,194,304 x 16(word mode)

· Fast access time : 100ns(Max.)

· Supply voltage : single +5V

· Current consumption

Operating : 70mA(Max.)

Standby : 100mA(Max.)

· Fully static operation

The KM23C64000BG is a fully static mask programmable ROM

fabricated using silicon gate CMOS process technology, and is

organized either as 8,388,608 x 8 bit(byte mode) or as

4,194,304 x 16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with a 5V single power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

· All inputs and outputs TTL compatible

· Three state outputs

· Package

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

-. KM23C64000BG : 44-SOP-600

The KM23C64000BG is packaged in a 44-SOP.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

A21

MEMORY CELL

MATRIX

(4,194,304x16/

8,388,608x8)

A20

A19

A21

A18

BUFFERS

AND

DECODER

A17

A10

A11

38 A12

37 A13

SENSE AMP.

BUFFERS

AND

DECODER

DATA OUT

BUFFERS

A14

A15

A16

SOP

A-1

CE 12

BHE

VSS

32 VSS

OE 14

Q15/A-1

Q0/Q8

Q7/Q15

CONTROL

LOGIC

Q14

BHE

Q13

Q10 20

Q12

Pin Name

A0 - A21

Pin Function

Address Inputs

Data Outputs

Q11

VCC

Q0 - Q14

Q15 /A-1

Output 15(Word mode)/

LSB Address(Byte mode)

KM23C64000BG

BHE

Word/Byte selection

Chip Enable

Output Enable

Power ( +5V)

Ground

VCC

VSS

12 3 4

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