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KL12 PDF预览

KL12

更新时间: 2024-09-14 12:05:03
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 61K
描述
Metal Silicon Junction, Majority Carrier Conduction

KL12 数据手册

  
Product specification  
KL12 THRU KL14  
Unit: mm  
DO-214AC(SMA)  
Features  
3.93  
3.73  
4.597  
3.988  
For Surface Mounted Applications  
Metal Silicon Junction, Majority Carrier Conduction  
Low Power Loss, High Efficiency  
High Forward Surge Current Capability  
1.575  
1.397  
2.896  
1.67  
2.489 1.47  
1
2
2.38  
2.18  
5.283  
4.775  
5.49  
5.29  
Recommended  
Land Pattern  
2.438  
1.981  
1.524  
0.762  
0.203  
0.051  
0.305  
0.152  
Maximum Ratings and Electrical Characteristics @ Ta = 25  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Symbol  
VRRM  
VRMS  
VDC  
KL12  
20  
KL13  
30  
KL14  
Unit  
40  
28  
40  
V
14  
21  
Maximum DC Blocking Voltage  
20  
30  
1.0  
Maximum Average Forward Rectified Current  
I(AV)  
A
A
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
30  
IFSM  
VF  
Maximum InstantaneousForward Voltage at 1.0A  
Maximum DC Reverse Current TA=25  
At Rated DC Blocking Voltage TA=100  
0.38  
0.38  
0.5  
20  
0.40  
V
IR  
mA  
88.0  
28  
R
R
JA  
JL  
Typical Thermal Resistance  
*
/W  
-55 to +125  
-55 to +150  
Operating Runction Temperature Range  
Storage Temperature Range  
TJ  
TSTG  
* P.C.B mounted with 0.2X0.2"(5.0x5.0mm)copper pad areas  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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