THYRISTOR MODULE
(
)
PD,PE,KK
PK
90GB
UL;E76102（M）
Power Thyristor/Diode Module PK90GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
93.5MAX
80
2- 6.5
3
2
1
●
T(AV)
T(RMS)
TSM
140A, I
I
90A, I
1800A
Internal Configurations
● di/dt 200 A/μs
● dv/dt 500V/μs
~
+
–
16.5
23
23
3-M5
K2
G2
K2
G2
（Applications）
3
2
1
110TAB
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（K2）�
（A2）�
A1K2
Various rectifiers
PK
PE
AC/DC motor drives
Heater controls
Light dimmers
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
A1K2
K1G1
（A2）�
（A1）�
Static switches
Unit：
A
PD
KK
■Maximum Ratings
Ratings
Symbol
Item
Unit
PK90GB40 PD90GB40
KK90GB40 PE90GB40
PK90GB80 PD90GB80
KK90GB80 PE90GB80
VRRM
VRSM
VDRM
400
480
400
800
960
800
V
V
V
＊Repetitive Peak Reverse Voltage
＊Non-Repetitive Peak Reverse Voltage
＊Non-Repetitive Peak Reverse Voltage
Symbol
Item
Conditions
Ratings
Unit
A
T（AV）
I
90
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：88℃
T（RMS）
I
140
A
Single phase, half wave, 180°conduction, Tc：88℃
1
TSM
I
A
／cycle, 50Hz/60Hz, peak Value, non-repetitive
1650 1800
/
2
2
2
2
I t
Value for one cycle of surge current
15000
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G（AV）
P
3
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
V
RGM
V
5
V
1
G
D
DRM
G
200
di／dt
I ＝100mA，Tj＝25℃，V ＝
／
V
，dI dt＝0.1A μs
A μs
/
/
/
2
ISO
V
A.C.1minute
2500
V
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
＊
－40 to ＋125
－40 to ＋125
4.7（48）
2.7（28）
170
℃
℃
Tstg
＊Storage Temperature
Mounting（M6） Recommended Value 2.5-3.9（25-40）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
Item
Conditions
Ratings
15
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
DRM
at V
at V
, single phase, half wave, Tj＝125℃
RRM
I
15
＊
＊
, single phase, half wave, Tj＝125℃
TM
V
1.30
On-State Current 270A, Tj＝125℃ Inst. measurement
GT
GT
T
D
I
／V
Tj＝25℃，I ＝1A，V ＝6V
100 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj＝125℃，V ＝／V
2
1
tgt
T
G
D
DRM
G
/
I ＝90A，I ＝100mA，Tj＝25℃，V ＝
／
2V ，dI dt＝0.1A μs
μs
/
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
Tj＝125℃, V ＝／V
, Exponential wave.
V μs
/
3
H
I
mA
mA
Tj＝25℃
L
I
Lutching Current, typ.
100
0.30
Tj＝25℃
Junction to case
Rth（j-c）＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
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