KK4000-Fast Switching Thyristor
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
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2500-3000V
DRM
HIGH POWER THYRISTOR FOR INVERTER APPLICATION
Features:
. All Diffused Structure
. Amplifying Gate Configuration
KT110dT
. Blocking capability up to 3000 volts
. High dV/dt Capability
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking-Off State
V
(1)
V
(1)
V
(1)
Device Type
KK4000/25
KK4000/28
KK4000/30
RRM
DRM
RSM
Notes:
2500
2800
3000
2500
2800
3000
2700
3000
3200
All ratings are specified for Tj=25oC unless
otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +125 oC
(2) 10 msec. Max. Pulse width
(3) Maximum value for Tj=125 oC.
(4) Minimum value for linear and exponential
waveshape to 67% rated VDRM. Gate open,
Tj=125 oC
VRRM = Repetitive peak reverse voltage
VDRM = Repetitive peak off state voltage
VRSM = Non Repetitive peak reverse voltage(2)
Repetitive peak reverse
5 mA
180 mA (3)
leakage and off state
leakage
IRRM/IDRM
dV/dt (4)
(5) The value of di/dt is established in
accordance with JB/T4193-2013.
Critical rate of voltage rise
1000 V/sec (min)
Conducting-On State
Parameter
Symbol
Min.
Max.
Typ.
Units Conditions
Average value of on-state current
RMS value of on-state current
IT(AV)
ITRMS
ITSM
I2t
4000
6280
48000
12x106
1000
200
A
A
Sinewave,180o conduction,Tc=55oC
Nominal value
10 msec (50Hz), sinusoidal wave-
shape, 180o conduction, Tj = 125 oC
Peak one cycle surge
(non repetitive) current
A
I square t
A2s
mA
mA
V
10 msec
Latching current
IL
VD=12V; RL=12ohms
VD=12V; I=2.5A
ITM= 3000A;Tj =25oC
Tj=125oC
Holding current
IH
Peak on-state voltage
Threshold voltage, low level
Slope resistance, low-level
VTM
VTO
rT
1.8
1.32
V
0.16
mΩ
3000A to 5500A
Critical rate of rise of on-state
current(5)
di/dt
200
A/μs Repetition
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