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KK3000-28 PDF预览

KK3000-28

更新时间: 2024-11-22 15:19:03
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扬杰 - YANGJIE /
页数 文件大小 规格书
3页 237K
描述
T15C

KK3000-28 数据手册

 浏览型号KK3000-28的Datasheet PDF文件第2页浏览型号KK3000-28的Datasheet PDF文件第3页 
KK3000-Fast Switching Thyristor  
Jiangsu Yangjie Runau Semiconductor Co.,Ltd  
************************************************************************************************************************************  
2500-3000V  
DRM  
HIGH POWER THYRISTOR FOR INVERTER APPLICATION  
Features  
. All Diffused Structure  
KT95cT  
. Amplifying Gate Configuration  
. Blocking capability up to 3000 volts  
. High dV/dt Capability  
. Pressure Assembled Device  
ELECTRICAL CHARACTERISTICS AND RATINGS  
Blocking-Off State  
V
(1)  
V
(1)  
V
(1)  
Device Type  
KK3000/25  
KK3000/28  
KK3000/30  
RRM  
DRM  
RSM  
Notes  
2500  
2800  
3000  
2500  
2800  
3000  
2700  
3000  
3200  
All ratings are specified for Tj=25oC unless  
otherwise stated.  
(1) All voltage ratings are specified for an applied  
50Hz/60zHz sinusoidal waveform over the  
temperature range 0 to +125 oC  
(2) 10 msec. Max. Pulse width  
VRRM = Repetitive peak reverse voltage  
VDRM = Repetitive peak off state voltage  
VRSM = Non Repetitive peak reverse voltage(2)  
(3) Maximum value for Tj=125 oC.  
(4) Minimum value for linear and exponential  
waveshape to 67% rated VDRM. Gate open,  
Tj=125 oC  
Repetitive peak reverse  
5 mA  
150 mA (3)  
leakage and off state  
leakage  
IRRM/IDRM  
dV/dt (4)  
(5) The value of di/dt is established in  
accordance with JB/T4193-2013.  
Critical rate of voltage rise  
1000 V/sec (min)  
Conducting-On State  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
Average value of on-state current  
RMS value of on-state current  
IT(AV)  
ITRMS  
ITSM  
I2t  
3000  
4710  
36000  
6.5x106  
1000  
200  
A
A
Sinewave,180o conduction,Tc=55oC  
Nominal value  
10 msec (50Hz), sinusoidal wave-  
shape, 180o conduction, Tj = 125 oC  
Peak one cycle surge  
(non repetitive) current  
A
I square t  
A2s  
10 msec  
Latching current  
IL  
mA  
mA  
V
VD=12V; RL=12ohms  
VD=12V; I=2.5A  
ITM= 3000A;Tj =25oC  
Tj=115oC  
Holding current  
IH  
Peak on-state voltage  
Threshold voltage, low level  
Slope resistance, low-level  
VTM  
VTO  
rT  
1.90  
1.36  
V
0.18  
mΩ  
3000A to 5500A  
Critical rate of rise of on-state  
current(5)  
di/dt  
200  
A/μs Repetition  
http://www.chinarunau.com  
Page 1 of 3  

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