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KK24LC04BD PDF预览

KK24LC04BD

更新时间: 2024-11-21 20:11:07
品牌 Logo 应用领域
可天士 - KODENSHI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 260K
描述
EEPROM, 512X8, Serial, CMOS, PDSO8

KK24LC04BD 数据手册

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TECHNICAL DATA  
KK24LC04B/08B  
4K/8K 2.5V CMOS Serial EEPROMs  
DESCRIPTION  
KK24LC04B/08B is a 4K-or 8K-bit Electrically Erasable PROM. The device is organized as two or four blocks of 256 x  
8 bit memory with a two wire serial interface. Low voltage design permits operation down to 2.5 volts with standby and  
active currents of only 5µA and 1mA respectively. The KK24LC04B/08B also has a page-write capability for up to 16  
bytes of data. The KK24LC04B/08B is available in the standard 8-pin DIP.  
FEATURES  
• Single supply with operation down to 2.5V  
• Low power CMOS technology  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
- 5 µA standby current typical at 3.0V  
• Organized as two or four blocks of 256 bytes (2x256x8) and  
PACKAGE  
TA = -40 ... +85 °C  
(4x256x8)  
• Two wire serial interface bus, I2C compatible  
• Schmitt trigger, filtered inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (2.5V) and 400 kHz (5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
PINNING  
Name  
Vss  
Function  
Ground  
SDA  
SCL  
WP  
Serial Address/Data I/O  
Serial Clock  
Write Protect Input  
+2.5V to 5.5V Power Supply  
VCC  
AO, A1, A2 No Internal Connection  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
• 1,000,000 ERASE/WRITE cycles guaranteed*  
• Data retention > 200 years  
Pin Connection  
A0  
Vcc  
WP  
• 8-pin DIP  
• Temperature range -40 to +85 oC  
1
2
3
4
8
7
6
5
A1  
A2  
SCL  
SDA  
Vss  
1

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