Datasheet > KK1000-28

KK1000-28

更新时间： 2024-03-03 10:08:33

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扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	234K
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T8C

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KK1000-28 数据手册

KK1000-Fast Switching Thyristor

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

************************************************************************************************************************************

2500-3000V

DRM

HIGH POWER THYRISTOR FOR INVERTER APPLICATION

Features：

KT55cT

. All Diffused Structure

. Amplifying Gate Configuration

. Blocking capability up to 3000 volts

. High d_V/d_tCapability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking-Off State

(1)

Device Type

KK1000/25

KK1000/28

KK1000/30

RRM

DRM

RSM

Notes：

2500

2800

3000

2500

2800

3000

2700

3000

3200

All ratings are specified for Tj=25^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +125 ^oC

(2) 10 msec. Max. Pulse width

(3) Maximum value for Tj=125 ^oC.

(4) Minimum value for linear and exponential

waveshape to 67% rated V_DRM.Gate open,

Tj=125 ^oC

V_RRM= Repetitive peak reverse voltage

V_DRM= Repetitive peak off state voltage

V_RSM= Non Repetitive peak reverse voltage(2)

Repetitive peak reverse

5 mA

100 mA (3)

I_RRM/I_DRM

d_V/d_t(4)

leakage and off state

leakage

(5) The value of di/dt is established in

accordance with JB/T4193-2013.

Critical rate of voltage rise

1000 V/sec (min)

Conducting-On State

Parameter

Symbol

Min.

Max.

Typ.

Units Conditions

Average value of on-state current

RMS value of on-state current

I_T(AV)

I_TRMS

I_TSM

I²t

1000

1570

12000

7.2x10⁵

1000

200

Sinewave,180^oconduction,Tc=55^oC

Nominal value

10 msec (50Hz), sinusoidal wave-

shape, 180^oconduction, T_j= 125 ^oC

Peak one cycle surge

(non repetitive) current

I square t

A²s

10 msec

Latching current

I_L

V_D=12V; R_L=12ohms

V_D=12V; I=2.5A

I_TM= 3000A;Tj =25^oC

Tj=125^oC

Holding current

I_H

Peak on-state voltage

Threshold voltage, low level

Slope resistance, low-level

V_TM

V_TO

r_T

2.90

1.58

0.44

mΩ

1000A to 2500A

Critical rate of rise of on-state

current(5)

di/dt

200

A/μs Repetition

http://www.chinarunau.com

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