Datasheet > KIA70N06

KIA70N06

更新时间： 2024-11-29 18:09:59

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KIA70N06 数据手册

70A 60V

N-CHANNEL MOSFET

70N06

KIA

SEMICONDUCTORS

1.Description

These N-Channel enhancement mode power field effect transistors are produced using

KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse

in the avalanche and commutation mode. These devices are well suited for low voltage applications such

as automotive, DC/DC converters, and high efficiency switching for power management in portable and

battery operated products.

2. Features

70A, 60V, R_DS(on)= 0.015Ω @V_GS= 10 V

Low gate charge ( typical 48nC)

Low Crss ( typical 32.5pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175º maximum junction temperature rating

3. Pin configuration

Function

Gate

Drain

Source

1 of

Rev 1.1 NOV 2015

12 3 4 5 6 7...14

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