Datasheet > KIA4N60H

KIA4N60H

更新时间： 2024-10-15 18:09:39

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

KIA4N60H 数据手册

4.0A 600V

N-CHANNEL MOSFET

4N60H

KIA

SEMICONDUCTORS

1.Description

The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high

voltage, high speed power switching applications such as switching regulators, switching converters,

solenoid, motor drivers, relay drivers.

2. Features

R_DS(ON)=2.3Ω@ V_GS=10V

Low gate charge (typical 13.5nC)

High ruggedness

Fast switching capability

Avalanche energy specified

Improved dv/dt capability

3. Pin configuration

Function

Gate

Drain

Source

Drain

1 of 6

Rev 1.2 Dec 2014

12 3 4 5 6

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
KIA50N06	ETC	获取价格	three-terminal silicon device with current conduction capability of about 50A,
KIA50N06B	KIA	获取价格	TO-251.TO-252.TO-220
KIA555F	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT (TIMER)
KIA555P	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT (TIMER)
KIA578R000FP	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT
KIA578R000PI	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT
KIA578R015FP	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT
KIA578R015FP/PI	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT
KIA578R018FP/PI	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT
KIA578R020FP/PI	KEC	获取价格	BIPOLAR LINEAR INTEGRATED CIRCUIT