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KIA2305 PDF预览

KIA2305

更新时间: 2024-06-27 12:11:21
品牌 Logo 应用领域
可易亚 - KIA /
页数 文件大小 规格书
4页 104K
描述
SOT-23

KIA2305 数据手册

 浏览型号KIA2305的Datasheet PDF文件第2页浏览型号KIA2305的Datasheet PDF文件第3页浏览型号KIA2305的Datasheet PDF文件第4页 
3.5A30V  
2306  
N-CHANNEL MOSFET  
KIA  
SEMICONDUCTORS  
1. Features  
n
n
n
n
VDS=30V,RDS(on)=0.057Ω@VGS=10V,ID=3.5A  
VDS=30V,RDS(on)=0.094Ω@VGS=4.5V,ID=2.8A  
Power MOSFET  
100% Rg tested  
2.Symbol  
Pin  
1
Function  
Gate  
2
Source  
Drain  
3
3. Absolute maximum ratings  
(TA=25°C,unless otherwise noted)  
Parameter  
Symbol  
Rating  
Units  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
30  
+20  
3.5  
2.8  
16  
V
V
TA=25°C  
TA=70°C  
Drain current continuous (TJ=150 ºC) a, b  
ID  
A
Pulsed drain current a  
Continuous source current (diode conduction) a, b  
IDM  
IS  
1.25  
TA=25°C  
1.25  
0.8  
W
Power dissipation a, b  
PD  
TA=70°C  
Junction and storage temperature range  
TJ ,TSTG  
-55 to150  
ºC  
Units  
Parameter  
Symbol  
RthJA  
Typ  
-
Max  
100  
-
t< 5 sec  
a
Maximum junction-ambient  
ºC/W  
steady state  
130  
Notes  
a. Surface mounted on FR4 board,  
b. t<5 sec.  
1 of 4  
Rev 1.1 JAN 2014  

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