Datasheet > KI1N60DS

KI1N60DS

更新时间： 2024-06-27 12:13:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1067K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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KI1N60DS 数据手册

SMD Type

MOSFET

N-Channel MOSFET

KI1N60DS

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● VDS (V) = 600V

● I

D = 0.4 A (VGS = 10V)

● R^DS(ON)＜ 30Ω (VGS = 10V)

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

0.4

Unit

Gate-Source Voltage

Tc=25℃

Tc=70℃

Continuous Drain Current

0.25

1.5

Pulsed Drain Current @ tp=10us

Power Dissipation

0.4

Tc=25℃

Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A)

Peak Diode Recovery (Note.1)

dv/dt

4.5

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

141

2.7

℃/W

RthJC

150

℃

Storage Temperature Range

stg

-55 to 150

Note.1: IS = 1.5 A, di/dt ≤ 100 A/u s, VDD ≤ BVDSS

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