Datasheet > KI1N60

KI1N60

更新时间： 2024-10-15 18:09:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	233K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI1N60 数据手册

SMD Type

MOSFET

Transistors

N-Channel Power MOSFET

KI1N60

Ƶ Features

1.70 0.1

ƽ VDS (V) = 600V

ƽ ID = 1 A

ƽ RDS(ON) ˘ 10.5¡ (VGS = 10V)

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

600

Gate-Source Voltage

T_C=25ć

Continuous Drain Current

T_C=100ć

0.7

Pulsed Drain Current

tot

T_C=25ć

Power Dissipation

E_AS

Single Pulse Avalanche Energy

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

=250A, VGS=0V

DS=600V, VGS=0V, T_C=25ć

DS=480V, VGS=0V, T =125ć

DS=0V, VGS 30V

DS=VGS , I =250A

GS=10V, I =0.5A

Min

600

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

Zero Gate Voltage Drain Current

IDSS

100

Gate-Body Leakage Current

Gate Threshold Voltage

GSS

GS(th)

DS(O

iss

oss

rss

Static Drain-Source On-Resistance

Input Capacitance

10.5

150

GS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Diode Forward Voltage

=1A,VGS=0V

1.5

Note: Pulse test tpİ300ȝs, įİ2%

Ƶ Marking

Marking

1N60

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