Datasheet > KI1N60

KI1N60

更新时间： 2024-11-18 18:09:23

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	233K
描述
N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KI1N60 数据手册

SMD Type

MOSFET

Transistors

N-Channel Power MOSFET

KI1N60

Ƶ Features

1.70 0.1

ƽ VDS (V) = 600V

ƽ ID = 1 A

ƽ RDS(ON) ˘ 10.5¡ (VGS = 10V)

0.42 0.1

0.46 0.1

1.Gate

2.Drain

3.Source

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

600

Gate-Source Voltage

T_C=25ć

Continuous Drain Current

T_C=100ć

0.7

Pulsed Drain Current

tot

T_C=25ć

Power Dissipation

E_AS

Single Pulse Avalanche Energy

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

=250A, VGS=0V

DS=600V, VGS=0V, T_C=25ć

DS=480V, VGS=0V, T =125ć

DS=0V, VGS 30V

DS=VGS , I =250A

GS=10V, I =0.5A

Min

600

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

Zero Gate Voltage Drain Current

IDSS

100

Gate-Body Leakage Current

Gate Threshold Voltage

GSS

GS(th)

DS(O

iss

oss

rss

Static Drain-Source On-Resistance

Input Capacitance

10.5

150

GS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Diode Forward Voltage

=1A,VGS=0V

1.5

Note: Pulse test tpİ300ȝs, įİ2%

Ƶ Marking

Marking

1N60

www.kexin.com.cn

中文翻译

下载PDF

与KI1N60相关器件

型号	品牌	获取价格	描述	数据表
KI1N60DS	KEXIN	获取价格	N-Channel MOSFET
KI20304100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI2030C000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI2030C200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI20509300J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI21302300J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI21303300J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI21305000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,
KI21309300J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
KI21503100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block