Datasheet > KI1905DL

KI1905DL

更新时间： 2024-11-06 12:53:23

品牌	Logo	应用领域
TYSEMI		栅
页数	文件大小	规格书
2页	149K
描述
Drain-source voltage Vds -8V Gate-source voltage Vgs -8V

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数据手册

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KI1905DL 数据手册

TraMnOsiSstFIoCErs

Product specification

KI1905DL

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Drain-source voltage

Symbol

V^DS

5 secs

Steady State

Unit

-8

Gate-source voltage

V^GS

0.60

0.43

0.57

0.41

Continuous drain current (T^J= 150 )* T^A=25

I^D

T^A=85

Pulsed drain current

I^DM

I^S

1.0

Continuous source current (diode conduction) *

-0.25

-0.23

0.30

0.16

0.27

0.14

Power dissipation *

T^A=25

T^A=85

P^D

-55 to +150

Operating junction and storage temperature range

* Surface Mounted on 1" X 1" FR4 Board.

T^j,T^stg

Thermal Resistance Ratings Ta = 25

Parameter

Symbol

R^thJA

Typical

360

Maximum

Unit

415

460

350

5 sec

Maximum Junction-to-Ambient*

Maximum Junction-to-Foot (Drain)

Steady State

400

R^thJF

300

* Surface Mounted on 1" X 1" FR4 Board.

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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