Datasheet > KI10P40DY

KI10P40DY

更新时间： 2024-06-27 12:11:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	444K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI10P40DY 数据手册

SMD Type

MOSFET

P-Channel MOSFET

KI10P40DY

SOP-8

■ Features

● VDS=-40V

● I

● RDS(on)= 42mΩ@VGS=-10V ,I

● RDS(on)= 70mΩ@VGS=-4.5V,I

D =-15A

=-1A

0.15

1.50

=-1A

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-15

TA=25℃

TA=70℃

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

-10

-30

1.3

TA=25℃

TA=70℃

0.8

Junction Temperature

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

Symbol

Test Conditions

Min

-40

Typ

Max

Unit

DSS

=-250μA, VGS=0V

DS=-32V, VGS=0V,T

DS=0V, VGS=±20V

DSS

GSS

-1

±100

=25℃

μA

GS(th)

DS=VGS , ID=-250μA

GS=-10V, I

=-1A

Static Drain-Source On-Resistance

RDS(On)

D=-10A

mΩ

^GS=-4.5V, I

D=-1A

■ Marking

10P40

Marking

****

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