Datasheet > KI10N06DY

KI10N06DY

更新时间： 2024-11-19 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	639K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI10N06DY 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

KI10N06DY

SOP-8

■Features

● VDS (V) = 60V

● R^DS(ON)＜18mΩ(V^GS= 10V), I

= 9.2 A

● R^DS(ON)＜28mΩ(VGS = 4.5V), I

● Low Input Capacitance

D = 7.5 A

0.15

1.50

● Fast Switching Speed

5 Drain

6 Drain

7 Drain

8 Drain

1 Source

2 Source

3 Source

4 Gate

■Absolute Maximum Ratings (T

= 25℃,unless otherwise specified.)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

±20

Steady

State

=25℃

=70℃

9.2

7.4

Continuous Drain Current (Note 2), V^GS= 10V

=25℃

=70℃

11.9

9.5

t<10s

Steady

State

=25℃

=70℃

7.5

6.0

Continuous Drain Current (Note 2), V^GS= 4.5V

=25℃

=70℃

9.7

7.7

t<10s

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Maximum Continuous Body Diode Forward Current (Note 2)

Avalanche Current (Note 3) L = 0.1mH

Avalanche Energy (Note 3) L = 0.1mH

Total Power Dissipation (Note 1)

15.3

11.7

1.5

℃/W

℃

Total Power Dissipation (Note 2)

2.1

Steady State

t<10s

Thermal Resistance,

Junction to Ambient (Note 1)

thJA

Steady State

t<10s

Thermal Resistance,

Junction to Ambient (Note 2)

Thermal Resistance, Junction to Case

Junction Temperature

RthJC

150

-55 to 150

Storage Temperature Range

stg

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