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KI001PW

更新时间: 2024-11-18 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
1页 333K
描述
P-Channel MOSFET

KI001PW 数据手册

  
SMD Type  
MOSFET  
P-Channel MOSFET  
KI001PW  
Features  
VDS (V) =-15V  
ID =-3 A (VGS =-10V)  
RDS(ON) 85mΩ (VGS =-4.5V)  
RDS(ON) 95mΩ (VGS =-2.5V)  
1 Gate  
2 Source  
3 Drain  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-15  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
±12  
-3  
Continuous Drain Current  
Power Dissipation  
I
D
A
P
D
0.2  
W
Junction Temperature  
T
J
150  
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
V
DSS  
-15  
I
D
=-250μA, VGS=0V  
DS=-15V, VGS=0V, T  
DS=0V, VGS=±10V  
I
DSS  
GSS  
-1  
±100  
-1  
V
V
V
V
V
J=25℃  
μA  
nA  
V
I
V
GS(th)  
-0.4  
DS=VGS ID=-250μA  
GS=-4.5V, I  
GS=-2.5V, I  
D
=-3A  
=-2A  
85  
Static Drain-Source On-Resistance  
RDS(On)  
mΩ  
D
95  
Marking  
Marking  
001P  
1
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