Datasheet > KI001P

KI001P

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	315K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI001P 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

KI001P

SOT-23

Unit: mm

+0.1

-0.1

2.9

+0.1

-0.1

0.4

■ Features

● VDS (V) =-12V

● ID =-2.8 A

● RDS(ON) ＜ 100mΩ (VGS =-4.5V)

● RDS(ON) ＜ 150mΩ (VGS =-2.5V)

+0.1

+0.05

-0.01

0.95

-0.1

0.1

+0.1

-0.1

1.9

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-12

Unit

VDS

Gate-Source Voltage

±8

Continuous Drain Current

Power Dissipation

-2.8

1.2

Junction Temperature

150

℃

Junction and Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Symbol

Test Conditions

Min

-12

Typ

-18

Max

Unit

DSS

GSS

GS(th)

=-250μA, VGS=0V

DS=-12V, VGS=0V,T

DS=0V, VGS=±12V

= 25℃

μA

±100

-1.1

100

-0.4

-0.7

DS=VGS ID=-250μA

GS=-4.5V, I

GS=-2.5V, I

=-1A

Static Drain-Source On-Resistance

RDS(On)

mΩ

D=-0.5A

150

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