Datasheet > KGF30N65FDA

KGF30N65FDA

更新时间： 2024-10-31 17:15:39

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
12页	2362K
描述
TO-220IS(1)

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中文翻译

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数据手册

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KGF30N65FDA 数据手册

PRODUCT DATASHEET

Insulated Gate Bipolar Transistor - KGF30N65FDA

650V, 30A Field Stop Trench IGBTs

KGF30N65FDA

PACKAGE DIMENSION(TO-220IS(1))

KEC Field Stop Trench IGBTs offer low switching losse,

high energy efficiency and short circuit ruggedness.

It is designed for applications such as motor control,

uninterrupted power supplies(UPS), general inverters.

DIM MILLIMETERS

10.16±0.2

15.87±0.2

2.54±0.2

0.8±0.1

3.18±0.1

3.3±0.1

12.57±0.2

0.5±0.1

13.0±0.5

FEATURES

3.23±0.1

1.47 MAX

2.54±0.2

6.68±0.2

4.7±0.2

• High speed switching

• High ruggedness, temperature stable behavior

• 650V breakdown voltage

• Maximum junction temperature: 150℃

• Short circuit withstand times > 3µs

• Extremely enhanced avalanche capability

2.76±0.2

PIN CONFIGURATION

APPLICATIONS

• Motor drives

• UPS(uninterrupted power supplies)

• General inverters

• Industrial SMPS

1. Gate

2. Collector

3. Emitter

MARKING CODE

KGF

30N65FDA

301

➀

➁

ORDERING INFORMATION

QTY

PART NUMBER

➀ Device Name

➁ Lot No.

(PER TUBE)

(PER CARTON BOX)

KGF30N65FDA-U/P or U/H

50 pcs

4,000 pcs

Jun 15, 2023 Rev.0

1 / 11

12 3 4 5 6 7...12

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