Datasheet > KFS20(BFS20)

KFS20(BFS20)

更新时间： 2024-10-31 18:09:35

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科信 - KEXIN		/
页数	文件大小	规格书
1页	39K
描述
NPN Transistor

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中文翻译

获取价格

数据手册

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KFS20(BFS20) 数据手册

SMD Type

Transistors

NPN Medium Frequency Transistor

KFS20^(BFS20)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low current (max. 25 mA)

Low voltage (max. 20 V)

Very low feedback capacitance (typ. 350 fF).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current

K/W

Peak collector current

ICM

power dissipation

250

Thermal resistance from junction to ambient *

Junction temperature

Rth j-a

500

150

Storage temperature

Tstg

-65 to +150

* Transistor mounted on an FR4 printed-circuit board.

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

IEBO

hFE

Testconditons

Min

Typ

Max

100

Unit

IE = 0; VCB = 20 V

Collector cutoff current

IE = 0; VCB = 20 V; Tj = 100

IC = 0; VEB = 4V

Emitter cutoff current

DC current gain

100

IC = 7mA; VCE = 10 V

740

Base to emitter voltage

Collector capacitance

Freedback capacitance

Transition frequency

VBE

IC = 7 mA; VCE = 10V

900

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC=0,VCB=10V,f=1MHz

IC =5mA; VCE =10 V; f = 100 MHz

Cre

350

450

275

MHz

Marking

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