是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.7 |
最长访问时间: | 14.5 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B63 |
内存密度: | 536870912 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 部门数/规模: | 512 |
端子数量: | 63 | 字数: | 33554432 words |
字数代码: | 32000000 | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA63,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 页面大小: | 1K words |
并行/串行: | PARALLEL | 电源: | 1.8 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 64K | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.04 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | NO |
类型: | MLC NAND TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KFG1216Q2A-FEB50 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 | |
KFG1216Q2A-FEB5T | SAMSUNG |
获取价格 |
Flash, 32MX16, 14.5ns, PBGA63, | |
KFG1216Q2A-FEB6 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216Q2A-FEB60 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 | |
KFG1216Q2A-FED5 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216Q2A-FED50 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFG1216Q2A-FED6 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216Q2A-FED60 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFG1216Q2A-FIB5 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216Q2A-FIB50 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 |