生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 63 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.79 |
Is Samacsys: | N | 最长访问时间: | 76 ns |
其他特性: | SYNCHRONOUS BURST OPERATION IS POSSIBLE | JESD-30 代码: | R-PBGA-B63 |
长度: | 12 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 63 |
字数: | 33554432 words | 字数代码: | 32000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 32MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 2.9 V | 最小供电电压 (Vsup): | 2.4 V |
标称供电电压 (Vsup): | 2.65 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 9.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KFG1216D2A-DID6 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-DID60 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 | |
KFG1216D2A-FEB5 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-FEB6 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-FEB60 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63 | |
KFG1216D2A-FED5 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-FED6 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-FIB5 | SAMSUNG |
获取价格 |
FLASH MEMORY | |
KFG1216D2A-FIB50 | SAMSUNG |
获取价格 |
Flash, 32MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFG1216D2A-FIB6 | SAMSUNG |
获取价格 |
FLASH MEMORY |