Datasheet > KF4N60DI

KF4N60DI

更新时间： 2024-11-27 01:05:27

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	393K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF4N60DI 数据手册

KF4N60D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF4N60D

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

· V_DSS= 600V, I_D= 3.2A

0.96 MAX

0.90 MAX

· Drain-Source ON Resistance : R_DS(ON)=2.5Ω @V_GS= 10V

· Qg(typ) = 10nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

MAXIMUM RATING (Ta=25℃)

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

600

UNIT

V_GSS

±30

3.2

I_D

Drain Current

@T_C=100℃

2.0

DPAK (1)

KF4N60I

I_DP

Pulsed (Note1)

12*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

130

3.3

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

59.5

0.48

W/℃

℃

Tc=25℃

Drain Power

Dissipation

DIM MILLIMETERS

P_D

6.6 0.2

Derate above 25℃

6.1 0.2

5.34 0.3

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.7 0.2

9.3 0.3

T_stg

-55∼ 150

℃

2.3 0.2

Thermal Characteristics

0.76 0.1

2.3 0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.1

℃/W

0.5 0.1

1.8 0.2

Thermal Resistance, Junction-to-

Ambient

110

0.5

0.1

1.0 0.1

0.96 MAX

* : Drain current limited by maximum junction temperature.

1. GATE

1.02 0.3

2. DRAIN

3. SOURCE

PIN CONNECTION

IPAK(1)

2013. 8. 05

Revision No : 0

1/6

12 3 4 5 6

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