Datasheet > KF4N20LR

KF4N20LR

更新时间： 2024-11-27 17:15:23

品牌	Logo	应用领域
KEC		光电二极管
页数	文件大小	规格书
7页	525K
描述
PDFN33

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中文翻译

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技术参数
数据手册

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KF4N20LR 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.68	Base Number Matches：	1

KF4N20LR 数据手册

KF4N20LR

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

switching mode power supplies.

DIM MILLIMETERS

3.15 +0.05/-0.15

2.49 0.1

3.35 0.1

3.1 + 0.1

FEATURES

B1 B

0.75 +0.05

· V_DSS(Min.)= 200V, I_D= 3.1A

· Drain-Source ON Resistance : R_DS(ON)=1.2 Ω (max) @V_GS=10V

· Qg(typ.) =2.9nC

0.15+0.1/-0.05

1.88 + 0.1

0.65 Typ.

0.39+0.11/-0.09

0.4 0.1

· V_th(Max.)= 2V

0.13 Typ.

0.15 Max.

0.3 + 0.05

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

RATING

200

UNIT

V_GSS

Gate-Source Voltage

±20

3.1

PDFN33

T_C=25℃

I_D

T_C=100℃

Ta=25℃

1.9

Drain Current

1.2

I_DP

Pulsed (Note1)

5.7

Peak Diode Recovery dv/dt (Note2)

dv/dt

5.5

V/ns

T_C=25℃

23.1

0.18

3.1

Drain Power

Dissipation

P_D

Derate above25℃

Ta=25℃

W/℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

℃

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

5.4

℃/W

40*

* : Surface Mounted on 25mm×25mm FR4 Board, t ≤ 10 sec.

PIN CONNECTION

2019. 11. 05

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

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