Datasheet > KF4N20LDI

KF4N20LDI

更新时间： 2024-11-27 01:12:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	601K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF4N20LDI 数据手册

KF4N20LD/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF4N20LD

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

FEATURES

0.96 MAX

0.90 MAX

· V_DSS(Min.)= 200V, I_D= 3.6A

1.80+0.20

· Drain-Source ON Resistance : R_DS(ON)=1.15 Ω (max) @V_GS=10V

· Qg(typ.) =2.9nC

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

· V_th(Max.)= 2V

MAXIMUM RATING (Tc=25℃)

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

200

UNIT

V_GSS

±20

3.6

DPAK (1)

I_D

Drain Current

@T_C=100℃

2.2

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

E_AS

KF4N20LI

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

5.5

V/ns

T_C=25℃

0.25

W/℃

℃

DIM MILLIMETERS

Drain Power

Dissipation

P_D

6.6 0.2

Derate above25℃

6.1 0.2

5.34 0.3

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.7 0.2

9.3 0.3

T_stg

-55∼ 150

℃

2.3 0.2

0.76 0.1

Thermal Characteristics

2.3 0.1

0.5 0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

4.0

℃/W

1.8 0.2

0.5

0.1

Thermal Resistance, Junction-to-

Ambient

110

1.0 0.1

0.96 MAX

1. GATE

2. DRAIN

3. SOURCE

1.02 0.3

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

IPAK(1)

2012. 1. 18

Revision No : 1

1/6

12 3 4 5 6

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