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KF3N50FZ

更新时间: 2024-11-04 12:20:23
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
6页 86K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N50FZ 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.67
雪崩能效等级(Eas):110 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (ID):3 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):7 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KF3N50FZ 数据手册

 浏览型号KF3N50FZ的Datasheet PDF文件第2页浏览型号KF3N50FZ的Datasheet PDF文件第3页浏览型号KF3N50FZ的Datasheet PDF文件第4页浏览型号KF3N50FZ的Datasheet PDF文件第5页浏览型号KF3N50FZ的Datasheet PDF文件第6页 
KF3N50FZ/FS  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
C
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, fast reverse recovery time, low on resistance, low gate  
charge and excellent avalanche characteristics. It is mainly suitable for  
electronic ballast and switching mode power supplies.  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
_
2.54 0.2  
+
_
0.8 0.1  
+
FEATURES  
_
+
3.18  
0.1  
· VDSS= 500V, ID= 3A  
_
3.3 0.1  
+
F
_
12.57 0.2  
+
G
H
J
· Drain-Source ON Resistance : RDS(ON)=2.5(Max) @VGS = 10V  
· Qg(typ) = 7.50nC  
L
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
_
· trr(typ) = 120ns (KF3N50FS)  
· trr(typ) = 300ns (KF3N50FZ)  
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
_
6.68 0.2  
+
_
4.7  
+
_
0.2  
MAXIMUM RATING (Tc=25)  
2.76 0.2  
+
1
2
3
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
SYMBOL  
VDSS  
RATING  
500  
UNIT  
V
VGSS  
V
±30  
3*  
TO-220IS (1)  
ID  
Drain Current  
@TC=100℃  
1.8*  
7*  
A
IDP  
Pulsed (Note1)  
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
110  
4
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
10  
V/ns  
25  
0.2  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
PD  
Derate above 25℃  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
Thermal Characteristics  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
5.0  
/W  
/W  
Thermal Resistance, Junction-to-  
Ambient  
62.5  
* : Drain Current limited by maximum junction temperature  
PIN CONNECTION  
(KF3N50FZ/FS)  
D
G
S
2010. 11. 29  
Revision No : 0  
1/2  

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