Datasheet > KF3N50DZ/IZ

KF3N50DZ/IZ

更新时间： 2024-11-05 01:08:31

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	410K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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数据手册

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KF3N50DZ/IZ 数据手册

KF3N50DZ/IZ

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF3N50DZ

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS= 500V, I_D= 2.5A

· Drain-Source ON Resistance : R_DS(ON)=2.5Ω (Max) @V_GS= 10V

· Qg(typ) = 7.50nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

1. GATE

2. DRAIN

3. SOURCE

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

500

UNIT

V_GSS

±30

2.5

DPAK (1)

I_D

Drain Current

@T_C=100℃

1.5

I_DP

Pulsed (Note1)

KF3N50IZ

Single Pulsed Avalanche Energy

(Note 2)

E_AS

110

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

6.6 0.2

6.1 0.2

0.32

W/℃

℃

Tc=25℃

5.34 0.3

Drain Power

P_D

0.7 0.2

Dissipation

Derate above 25℃

9.3 0.3

2.3 0.2

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.76 0.1

2.3 0.1

T_stg

-55∼ 150

℃

0.5 0.1

Thermal Characteristics

1.8 0.2

0.5

0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.1

℃/W

1.0 0.1

0.96 MAX

Thermal Resistance, Junction-to-

Ambient

1.02 0.3

110

1. GATE

2. DRAIN

3. SOURCE

PIN CONNECTION

(KF3N50DZ/IZ)

IPAK(1)

2010. 11. 29

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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