Datasheet > KF3N40D

KF3N40D

更新时间： 2024-11-04 11:57:19

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	628K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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KF3N40D 数据手册

KF3N40D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF3N40D

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for LED Lighting and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

2.30+0.10

FEATURES

0.96 MAX

0.90 MAX

· V_DSS(Min.)= 400V, I_D= 2.2A

· Drain-Source ON Resistance : R_DS(ON)=3.4 Ω (max) @V_GS=10V

· Qg(typ.) =4.4nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

MAXIMUM RATING (Tc=25℃)

1. GATE

2. DRAIN

3. SOURCE

DPAK (1)

KF3N40I

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

400

UNIT

V_GSS

±30

2.2

I_D

Drain Current

@T_C=100℃

1.4

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

Repetitive Avalanche Energy

(Note 1)

E_AS

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

DIM MILLIMETERS

T_C=25℃

0.32

W/℃

℃

6.6

0.2

Drain Power

P_D

6.1 0.2

Dissipation

5.34

0.3

Derate above25℃

0.7 0.2

T_j

9.3 0.3

Maximum Junction Temperature

Storage Temperature Range

150

2.3 0.2

T_stg

-55∼ 150

℃

0.76 0.1

2.3 0.1

Thermal Characteristics

0.5 0.1

1.8 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.1

℃/W

0.5

0.1

1.0 0.1

Thermal Resistance, Junction-to-

Ambient

0.96 MAX

110

1.02 0.3

1. GATE

2. DRAIN

3. SOURCE

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

IPAK(1)

2010. 8. 23

Revision No : 0

1/6

12 3 4 5 6

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